The Heterogeneous photonic integration platform can make full use of the special structural and physical properties of different functional materials on a single chip. Apart from manufacturing optoelectronic devices with wider spectra, more functions, and better performance, heterogeneous integration in silicon photonics is also regarded as the most promising way to realize the single-chip integration of discrete devices, thus promoting the development of miniaturization and integration of optoelectronic systems.

Our team focuses on combining various photonics materials, including InP, (Al)GaAs, LN, SiN, and Si, based on heterogeneous photonic integration technology. We have demonstrated the world-first integrated III-V/Si/SiN and III-V/SiN platforms in integrated photonics. We have also extended the spectrum of fully integrated PIC to below 1 wavelength, for the first time. We have developed a new generation of photonic platforms, compound semiconductor on insulator (CSOI), based on which we achieved the most efficient frequency doubling devices, as well as ultra-low threshold resonators that generate optical combs.